●Features
1) High speed clock action up to 20MHz (Max.)
2) Wait function by HOLDB terminal
3) Part or whole of memory arrays settable as read only memory area by program
4) 1.7~5.5V single power source action most suitable for battery use
5) Page write mode useful for initial value write at factory shipment
6) Highly reliable connection by Au pad and Au wire
7) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
8) Auto erase and auto end function at data rewrite
9) Low current consumption
At write action (5V) : 1.5mA (Typ.)
At read action (5V) : 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
10) Address auto increment function at read action
11) Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WPB pin
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage
12) SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J/VSON008X2030 Package
13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
14) Data kept for 40 years
15) Data rewrite up to 1,000,000 times
供应ROHM品牌BR25S640F-WE2,BR25S640FV-WE2存储器广泛应用于CCD等安防产品上,品质优良,价格优势
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