Manufacturer: Fairchild Semiconductor Product Category: IGBT Modules RoHS: Details Configuration: Dual Collector-Emitter Breakdown Voltage: 600 V Collector-Emitter Saturation Voltage: 2.2 V Continuous Collector Current Ic Max: 150 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 500 W Package / Case: PM-GA Collector- Emitter Voltage VCEO Max: 600 V Maximum Gate Emitter Voltage: 20 V Maximum Operating Temperature: 150 C Minimum Operating Temperature: - 40 C Packaging: BULK