General Features
● V =60V,I =50A DS D
RDS(ON) <20m? @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
是中国现代大功率半导体器件的领航设计与销售企业，是中国家研发成功并上量销售大功率-超结-MOSFET（SJ-MOSFET）的设计公司，紧密结合自身器件与工艺设计技术领先的优势，与国际的鞋代工厂、封装、测试代工厂保持密切配合与合作，严谨产品质量控制，保证产品的持续优质和稳定供货。